AON6884 40v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 34a r ds(on) (at v gs =10v) < 11.3m w r ds(on) (at v gs = 4.5v) < 13.8m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc 120 pulsed drain current c continuous drain current parameter typ max t c =25c 1.6 8 t c =100c junction and storage temperature range -55 to 150 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 35 65 45 v 20 gate-source voltage drain-source voltage 40 the AON6884 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this is an all purpose device that is suitable for use in a wi de range of power conversion applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 40v avalanche energy l=0.1mh c mj avalanche current c 7 continuous drain current 61 9 a 35 a t a =25c i dsm a t a =70c i d 34 21 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 21 1 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 5 80 6 dfn5x6 ep2 g2 d2s2 g1 d1s1 top view 1 2 3 4 8 7 6 5 s1 g1 s2 g2 d1 d1 d2 d2 rev 1: november 2010 www.aosmd.com page 1 of 6
AON6884 symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.55 2.1 2.7 v i d(on) 120 a 9.4 11.3 t j =125c 14 17 11 13.8 m w g fs 50 s v sd 0.7 1 v i s 25 a c iss 1200 1500 1950 pf c oss 150 215 280 pf c rss 80 135 190 pf r g 1.7 3.5 5.3 w q g (10v) 22 27.2 33 nc q g (4.5v) 10 13.6 16 nc q gs 3.6 4.5 5.4 nc q gd 3.8 6.4 9 nc t d(on) 6.4 ns t r 17.2 ns t d(off) 29.6 ns t f 16.8 ns t rr 9 13 17 ns q rr 25 35 45 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =10a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =2 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =20v, i d =10a gate source charge gate drain charge total gate charge m w i s =1a,v gs =0v v ds =5v, i d =10a v gs =4.5v, i d =10a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =10a reverse transfer capacitance i f =10a, di/dt=500a/ m s v gs =0v, v ds =20v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. g. the maximum current rating is limited by bond-wi res. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. rev 1: november 2010 www.aosmd.com page 2 of 6
AON6884 typical electrical and thermal characteristics 17 52 10 0 18 40 4 8 12 16 20 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =10a v gs =10v i d =10a 5 10 15 20 25 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) v gs =4.5v v gs =10v i d =10a 25c 125c 0 20 40 60 80 100 120 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 4v 10v 4.5v 3.5v 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 25c 125c v ds =5v rev 1: november 2010 www.aosmd.com page 3 of 6
AON6884 typical electrical and thermal characteristics 17 52 10 0 18 40 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 10 20 30 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q jc normalized transient thermal resistance c oss c rss v ds =20v i d =10a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s r q jc =6c/w rev 1: november 2010 www.aosmd.com page 4 of 6
AON6884 typical electrical and thermal characteristics 17 52 10 0 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) z q qq q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 5 10 15 20 25 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r q ja =80c/w 10 100 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 1: november 2010 www.aosmd.com page 5 of 6
AON6884 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 1: november 2010 www.aosmd.com page 6 of 6
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